bias resistor t ransistor npn silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping h5 47 - 3000/tape & reel leshan radio company, ltd. ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldtc144tet1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications ldtc144tet1g ldtc144tet3g h5 47 - z a b solute maximum ratings (t a= 25 c) z electrical ch aracteristics (t a= 25 c) 3 collec t or 2 emitter 1 base r1 characteristics of built-in transistor parameter symbol v cbo 50 50 5 100 200 150 ? 55 to + 150 v v ma mw c c v ceo v ebo i c pc tj tstg unit limits collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) r 1 f t i c = 10 a i c = 2.0ma i e = 50 a v cb = 50v v eb = 4v k ? mhz a a v v v v 0.5 0.5 0.3 600 61.1 250 47 250 100 32.9 50 50 5 v ce = 5v, i c = 1ma i c /i b = 5ma/0.5ma v ce = 10v, i e = ? 5ma, f = 100mhz ? typ. min. max. unit conditions ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage input resistance transition frequency sc-89 rev.o 1/3 s-ldtc144tet1g s-ldtc144tet1g s-ldtc144tet3g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable.
leshan radio company, ltd. z electrical ch aracteristic cu rv es ldtc144tet1g 100 200 500 1m 2m 5m 10m 20m 50m 100m 1k 500 200 100 50 20 10 5 2 1 v ce = 5v dc current gain : h fe collector current : i c (a) fig.1 dc current gain vs. collector current ta = 100 c 25 c ? 40 c 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m l c /l b = 10 collector saturation voltage : v ce(sat) (v) collector current : i c (a) fig.2 collector-emitter saturation voltage vs. collector current ta = 100 c 25 c ? 40 c rev.o 2/3 ;s-ldtc144tet1g
leshan radio company, ltd. g m 0.08 (0.003) x d 3 pl j -x- -y- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 463c-01 obsolete, new standard 463c-02. a b y 12 3 n 2 pl k c -t- seating plane dim a min nom min nom inches 1.50 1.60 1.70 0.059 millimeters b 0.75 0.85 0.95 0.030 c 0.60 0.70 0.80 0.024 d 0.23 0.28 0.33 0.009 g 0.50 bsc h 0.53 ref j 0.10 0.15 0.20 0.004 k 0.30 0.40 0.50 0.012 l 1.10 ref m ??? ??? 10 ??? n ??? ??? 10 ??? s 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 bsc 0.021 ref 0.006 0.008 0.016 0.020 0.043 ref ??? 10 ??? 10 0.063 0.067 max max m h h l g recommended pattern of solder pads s sc - 8 9 rev.o 3/3 ldtc144tet1g ;s-ldtc144tet1g
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